Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Medium high voltage MOS transistorDescription: VISHAY SIHW30N60E-GE3 Field effect transistor, MOSFET, N-channel, 600V, 25A, TO-247AD-358295+$23.500650+$22.4963200+$21.9339500+$21.79331000+$21.65272500+$21.49205000+$21.39167500+$21.2912 -
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Category: Medium high voltage MOS transistorDescription: VISHAY SIHB6N65E-GE3 Power Field Effect Transistor, MOSFET, N-channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V545110+$10.0464100+$9.5441500+$9.20921000+$9.19252000+$9.12555000+$9.04187500+$8.974810000+$8.9413 -
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Category: Medium high voltage MOS transistorDescription: VISHAY SIHB23N60E-GE3 Power Field Effect Transistor, MOSFET, N-channel, 23 A, 600 V, 0.132 ohm, 10 V81235+$12.999950+$12.4443200+$12.1332500+$12.05541000+$11.97772500+$11.88885000+$11.83327500+$11.7777 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6035ENZC8 Power Field Effect Transistor, MOSFET, N-channel, 35 A, 600 V, 0.092 ohm, 10 V, 4 V New42965+$26.278250+$25.1552200+$24.5263500+$24.36911000+$24.21192500+$24.03225000+$23.91997500+$23.8076 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6047ENZ1C9 Power Field Effect Transistor, MOSFET, N-channel, 47 A, 600 V, 0.066 ohm, 10 V, 4 V New67365+$20.734750+$19.8486200+$19.3524500+$19.22841000+$19.10432500+$18.96255000+$18.87397500+$18.7853 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6024KNX Power Field Effect Transistor, MOSFET, N-channel, 24 A, 600 V, 0.15 ohm, 10 V, 5 V New320010+$10.4496100+$9.9271500+$9.57881000+$9.56142000+$9.49175000+$9.40467500+$9.335010000+$9.3001 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6009ENX Power Field Effect Transistor, MOSFET, N-channel, 9 A, 600 V, 0.5 ohm, 10 V, 4 V New919210+$8.0112100+$7.6106500+$7.34361000+$7.33022000+$7.27685000+$7.21017500+$7.156710000+$7.1300 -
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Category: NChannel MOS transistorDescription: Trans MOSFET N-CH 55V 18A 3Pin(3+Tab) TO-220AB61555+$2.320725+$2.148850+$2.0284100+$1.9769500+$1.94252500+$1.89955000+$1.882310000+$1.8565 -
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Category: Medium high voltage MOS transistorDescription: VISHAY SIHD6N62E-GE3 Power Field Effect Transistor, MOSFET, N-channel, 6 A, 620 V, 0.78 ohm, 10 V70965+$5.316325+$4.922550+$4.6468100+$4.5287500+$4.44992500+$4.35155000+$4.312110000+$4.2530 -
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Category: Medium high voltage MOS transistorDescription: VISHAY SIHF15N60E-GE3 Power Field Effect Transistor, MOSFET, N-channel, 15 A, 600 V, 0.23 ohm, 10 V, 2 V657510+$10.8768100+$10.3330500+$9.97041000+$9.95232000+$9.87985000+$9.78917500+$9.716610000+$9.6804 -
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Category: Medium high voltage MOS transistorDescription: TOSHIBA 2SK3878(F) Power Field Effect Transistor, MOSFET, N-channel, 9 A, 900 V, 1.3 ohm, 10 V, 4 V73545+$5.405425+$5.005050+$4.7247100+$4.6046500+$4.52452500+$4.42445000+$4.384410000+$4.3243 -
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Category: PChannel MOS transistorDescription: Trans MOSFET P-CH 100V 6.8A 3Pin (3+Tab) TO-220AB64215+$1.894125+$1.753850+$1.6555100+$1.6135500+$1.58542500+$1.55035000+$1.536310000+$1.5152 -
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Category: Medium high voltage MOS transistorDescription: VISHAY SIHG17N60D-E3 Power MOSFET, N Channel, 17A, 600V, 0.275Ω, 10V, 3V25345+$20.352250+$19.4824200+$18.9953500+$18.87361000+$18.75182500+$18.61275000+$18.52577500+$18.4387 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6030ENZ1C9 Power Field Effect Transistor, MOSFET, N-channel, 30 A, 600 V, 0.115 ohm, 10 V, 4 V New121920+$0.206650+$0.1913100+$0.1836300+$0.1775500+$0.17291000+$0.16985000+$0.166810000+$0.1637 -
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Category: Medium high voltage MOS transistorDescription: N Channel MOSFET, E-series, low quality factor, Vishay Semiconductor Vishay E-series MOSFET power supply is a high-voltage transistor with ultra-low maximum on resistance, low sensitivity value, and fast switching function. They provide various current ratings. Typical applications include servers and telecommunications power supplies, LED lighting, flyback converters, power factor correction (PFC), and switch mode power supplies (SMPS). ###Features: Low sensitivity value (FOM) RDS (on) x Qg, low input capacitance (Ciss), low on resistance (RDS (on)), ultra-low gate charge (Qg), fast switching, reduced switching and conduction losses # # MOSFET transistor, Vishay Semiconductor4990 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6030KNX Power Field Effect Transistor, MOSFET, N-channel, 30 A, 600 V, 0.115 ohm, 10 V, 5 V New3751 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6015ENZC8 Power Field Effect Transistor, MOSFET, N-channel, 15 A, 600 V, 0.26 ohm, 10 V, 4 V New3705 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6020ENZC8 功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 4 V 新6142 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6004ENX 功率场效应管, MOSFET, N沟道, 4 A, 600 V, 0.9 ohm, 10 V, 4 V 新5978 -
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Category: Medium high voltage MOS transistorDescription: ROHM R6011KNX 功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 5 V 新7948
